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SPD18P06P Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPD18P06P Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page 1999-11-22 Page 1 SPD18P06P SPU18P06P Preliminary data SIPMOS® Power-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated · 175°C operating temperature Product Summary Drain source voltage V VDS -60 Drain-source on-state resistance RDS(on) 0.13 W Continuous drain current A ID -18.6 Type Package Ordering Code SPD18P06P P-TO252 Q67040-S4189 SPU18P06P P-TO251 Q67040-S4192 Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Unit Value -18.6 -13.2 Continuous drain current TC = 25 °C TC = 100 °C A ID Pulsed drain current TC = 25 °C ID puls -74.4 Avalanche energy, single pulse ID = -18.6 A , VDD = -25 V, RGS = 25 W 150 mJ EAS Avalanche energy, periodic limited by Tjmax EAR 8 d v/dt 6 Reverse diode d v/dt IS = -18.6 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 175 °C kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 80 W Operating and storage temperature Tj , Tstg -55...+175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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