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CR5AS-12 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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CR5AS-12 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page CR5AS-12 Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 7.8 A Average on-state current IT (AV) 5 A Commercial frequency, sine half wave 180° conduction, Tc = 88°C Surge on-state current ITSM 90 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive I 2t for fusing I 2t33 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 0.5 W Average gate power dissipation PG (AV) 0.1 W Peak gate forward voltage VFGM 6V Peak gate reverse voltage VRGM 6V Peak gate forward current IFGM 0.3 A Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Mass — 0.26 g Typical value Notes: 1. With gate to cathode resistance RGK = 220 Ω. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current IRRM — — 2.0 mA Tj = 125°C, VRRM applied, RGK = 220 Ω Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125°C, VDRM applied, RGK = 220 Ω On-state voltage VTM — — 1.8 V Tc = 25°C, ITM = 15 A, instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 A Gate non-trigger voltage VGD 0.1 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 220 Ω Gate trigger current IGT 1 — 200 Note3 µA Tj = 25°C, VD = 6 V, IT = 0.1 A Holding current IH — 3.5 — mA Tj = 25°C, VD = 12 V, RGK = 220 Ω Thermal resistance Rth (j-c) — — 3.0 °C/W Junction to case Note2 Notes: 2. The measurement point for case temperature is at anode tab. 3. If special value of IGT is required, IGT from 20 to 100 µA is possible. www.kersemi.com |
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