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CMPA0060002D Datasheet(PDF) 1 Page - Cree, Inc

Part # CMPA0060002D
Description  2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

CMPA0060002D Datasheet(HTML) 1 Page - Cree, Inc

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Subject to change without notice.
www.cree.com/wireless
CMPA0060002D
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
Cree’s CMPA0060002D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon
or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and
wider bandwidths compared to Si and GaAs transistors. This
MMIC employs a distributed (traveling-wave) amplifier design
approach, enabling extremely wide bandwidths to be achieved
in a small footprint.
PN: CMPA0060002D
Typical Performance Over 0.5-6.0 GHz (T
C = 25˚C)
Parameter
0.5 GHz
1.0 GHz
2.5 GHz
4.0 GHz
6.0 GHz
Units
Gain
18.7
17.4
17.6
17.4
17.6
dB
Saturated Output Power @ P
IN 23 dBm
7.0
6.3
5.7
4.3
3.6
W
Power Gain @ P
IN 23 dBm
15.4
15.0
14.5
13.3
12.5
dB
PAE @ P
IN 23 dBm
43
40
36
28
31
%
Note: V
DD = 28 V, ID = 100 mA
Features
17 dB Small Signal Gain
2 W Typical P
SAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Size 0.169 x 0.066 x 0.004 inches
Applications
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers


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