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CMPA601C025D Datasheet(PDF) 2 Page - Cree, Inc |
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CMPA601C025D Datasheet(HTML) 2 Page - Cree, Inc |
2 / 6 page 2 CMPA601C025D Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Conditions Drain-source Voltage V DSS 84 V DC 25˚C Gate-source Voltage V GS -10, +2 V DC 25˚C Storage Temperature T STG -55, +150 ˚C Operating Junction Temperature T J 225 ˚C Maximum Forward Gate Current I GMAX 15 mA 25˚C Maximum Drain Current1 I DMAX 0.6 A Stage 1, 25˚C Maximum Drain Current1 I DMAX 1.7 A Stage 2, 25˚C Maximum Drain Current1 I DMAX 4.8 A Stage 3, 25˚C Thermal Resistance, Junction to Case (packaged) R θ JC 0.83 ˚C/W 85˚C, P DISS = 92.8 W in 440213 package Thermal Resistance, Junction to Case (die only) 2 R θ JC 0.36 ˚C/W 85˚C, P DISS = 92.8 W Mounting Temperature (30 seconds) T S 320 ˚C 30 seconds Note1 Current limit for long term, reliable operation Note2 Eutectic die attach using 80/20 AuSn mounted to a 10mil thick CuMo carrier. Electrical Characteristics (Frequency = 6.0 GHz to 12.0 GHz unless otherwise stated; T C = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold V TH -3.8 -2.8 -2.3 V V DS = 10 V, ID = 23.2 mA Drain-Source Breakdown Voltage V BD 84 100 – V V GS = -8 V, ID = 23.2 mA RF Characteristics2 Small Signal Gain @ 6 GHz S21 29.8 35 – dB V DD = 28 V, IDQ = 2.4 A, PIN = 10 dBm Small Signal Gain @ 10 GHz S21 30.2 35 – dB V DD = 28 V, IDQ = 2.4 A, PIN = 10 dBm Small Signal Gain @ 12 GHz S21 27.8 35 – dB V DD = 28 V, IDQ = 2.4 A, PIN = 10 dBm Power Output P OUT 45.5 47 – W V DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm, Frequency = 6.0, 10.0, 12.0 GHz Power Added Efficiency @ 6 GHz PAE 23.0 30 – % V DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm Power Added Efficiency @ 10 GHz PAE 23.3 32 – % V DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm Power Added Efficiency @ 12 GHz PAE 23.7 31 – % V DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm Power Gain G P – 28 – dB V DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm Input Return Loss S11 – -10 – dB V DD = 28 V, IDQ = 2.4 A Output Return Loss S22 – -8 – dB V DD = 28 V, IDQ = 2.4 A Output Mismatch Stress VSWR – 5 : 1 – Y No damage at all phase angles, V DD = 28 V, IDQ = 2.4 A, P OUT = 25W CW Notes: 1 Scaled from PCM data. 2 All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%. |
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