CMPA601C025D datasheet(2/6 Pages) CREE

Part #	CMPA601C025D

Description	25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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CMPA601C025D Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/RF

Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective

owners and do not imply specific product and/or vendor endorsement, sponsorship or association.

Absolute Maximum Ratings (not simultaneous) at 25˚C

Parameter

Symbol

Rating

Units

Conditions

Drain-source Voltage

V

DSS

84

V

DC

25˚C

Gate-source Voltage

V

GS

-10, +2

V

DC

25˚C

Storage Temperature

T

STG

-55, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

15

mA

25˚C

Maximum Drain Current1

I

DMAX

0.6

A

Stage 1, 25˚C

Maximum Drain Current1

I

DMAX

1.7

A

Stage 2, 25˚C

Maximum Drain Current1

I

DMAX

4.8

A

Stage 3, 25˚C

Thermal Resistance, Junction to Case (packaged)

R

θ

JC

0.83

˚C/W

85˚C, P

DISS = 92.8 W in 440213 package

Thermal Resistance, Junction to Case (die only) 2

R

θ

JC

0.36

˚C/W

85˚C, P

DISS = 92.8 W

Mounting Temperature (30 seconds)

T

S

320

˚C

30 seconds

Note1 Current limit for long term, reliable operation

Note2 Eutectic die attach using 80/20 AuSn mounted to a 10mil thick CuMo carrier.

Electrical Characteristics (Frequency = 6.0 GHz to 12.0 GHz unless otherwise stated; T

C = 25˚C)

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics

Gate Threshold

V

TH

-3.8

-2.8

-2.3

V

DS = 10 V, ID = 23.2 mA

Drain-Source Breakdown Voltage

V

BD

84

100

–

V

GS = -8 V, ID = 23.2 mA

RF Characteristics2

Small Signal Gain @ 6 GHz

S21

29.8

35

–

dB

V

DD = 28 V, IDQ = 2.4 A, PIN = 10 dBm

Small Signal Gain @ 10 GHz

S21

30.2

35

–

dB

V

DD = 28 V, IDQ = 2.4 A, PIN = 10 dBm

Small Signal Gain @ 12 GHz

S21

27.8

35

–

dB

V

DD = 28 V, IDQ = 2.4 A, PIN = 10 dBm

Power Output

P

OUT

45.5

47

–

W

V

DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm,

Frequency = 6.0, 10.0, 12.0 GHz

Power Added Efficiency @ 6 GHz

PAE

23.0

30

–

%

V

DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm

Power Added Efficiency @ 10 GHz

PAE

23.3

32

–

%

V

DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm

Power Added Efficiency @ 12 GHz

PAE

23.7

31

–

%

V

DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm

Power Gain

G

P

–

28

–

dB

V

DD = 28 V, IDQ = 2.4 A, PIN = 19 dBm

Input Return Loss

S11

–

-10

–

dB

V

DD = 28 V, IDQ = 2.4 A

Output Return Loss

S22

–

-8

–

dB

V

DD = 28 V, IDQ = 2.4 A

Output Mismatch Stress

VSWR

–

5 : 1

–

Y

No damage at all phase angles,

V

DD = 28 V, IDQ = 2.4 A,

P

OUT = 25W CW

Notes:

1

Scaled from PCM data.

2

All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%.

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