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SMBT3904PN Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SMBT3904PN
Description  NPN/PNP Silicon Switching Transistor Array
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SMBT3904PN Datasheet(HTML) 2 Page - Infineon Technologies AG

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SMBT3904PN
Aug-21-2002
2
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
40
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO
40
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector cutoff current
VCB = 30 V, IE = 0
ICBO
-
-
50
nA
DC current gain 1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
40
70
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
-
-
-
-
0.25
0.4
V
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
0.65
-
-
-
0.85
0.95
1) Pulse test: t < 300
s; D < 2%


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