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SMBT3904PN Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SMBT3904PN Datasheet(HTML) 1 Page - Infineon Technologies AG |
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SMBT3904PN Aug-21-2002 1 NPN/PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation VPS05604 6 3 1 5 4 2 EHA07193 12 3 4 5 6 W1s Direction of Unreeling Top View Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device Position in tape: pin 1 opposite of feed hole side EHA07177 6 54 3 2 1 C1 B2 E2 C2 B1 E1 TR1 TR2 Type Marking Pin Configuration Package SMBT3904PN s3P 1 = E 2 = B 3 = C 4 = E 5 = B 6 = C SOT363 Maximum Ratings Symbol Value Parameter Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 5 DC collector current IC 200 mA Total power dissipation , TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Thermal resistance, chip case1) RthJC 140 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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