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DRV8305-Q1 Datasheet(PDF) 1 Page - Texas Instruments |
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DRV8305-Q1 Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 54 page  DRV8305-Q1 PWM 4.4 to 45 V Gate Drive Sense Automotive 3-Phase Brushless Gate Driver SPI nFAULT Shunt Amps M EN_GATE Protection Shunt Amps LDO 50-mA LDO Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCT PREVIEW Information. Product in design phase of development. Subject to change or discontinuance without notice. DRV8305-Q1 SLVSD12A – MAY 2015 – REVISED MARCH 2016 DRV8305-Q1 Three-Phase Automotive Gate Driver With Three Integrated Current Shunt Amplifiers and Voltage Regulator 1 1 Features 1 • AEC-Q100 Qualified for Automotive Applications • Ambient Operating Temperature Ranges: – Temperature Grade 0 (E): –40°C to 150°C – Temperature Grade 1 (Q): –40°C to 125°C • 4.4-V to 45-V Operating Voltage • 1.25-A and 1-A Peak Gate Drive Currents • Programmable High- and Low-Side Slew-Rate Control • Charge-Pump Gate Driver for 100% Duty Cycle • Three Integrated Current-Shunt Amplifiers • Integrated 50-mA LDO (3.3-V and 5-V Option) • 3-PWM or 6-PWM Input Control up to 200 kHz • Single PWM-Mode Commutation Capability • Supports Both 3.3-V and 5-V Digital Interface • Serial Peripheral Interface (SPI) for Device Settings and Fault Reporting • Thermally-Enhanced 48-Pin HTQFP • Protection Features: – Fault Diagnostics and MCU Watchdog – Programmable Dead-Time Control – MOSFET Shoot-Through Prevention – MOSFET VDS Overcurrent Monitors – Gate-Driver Fault Detection – Reverse Battery-Protection Support – Limp Home-Mode Support – Overtemperature Warning and Shutdown 2 Applications • Three-Phase BLDC and PMSM Motors • Automotive Fuel and Water Pumps • Automotive Fans and Blowers 3 Description The DRV8305-Q1 device is a gate driver IC for three- phase motor-drive applications. The device provides three high-accuracy and temperature compensated half-bridge drivers, each capable of driving a high- side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low- voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V. The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference. The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low system standby and sleep currents. The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS of both the high-side and low-side MOSFETs is accuractely sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control. Device Options: • DRV8305NQ: Grade 1 with voltage refernece • DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO • DRV83055Q: Grade 1 with 5-V, 50-mA LDO • DRV8305NE: Grade 0 with voltage reference Device Information (1) PART NUMBER PACKAGE BODY SIZE (NOM) DRV8305-Q1 HTQFP (48) 7.00 mm × 7.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic |
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