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DRV83055PHPR Datasheet(PDF) 6 Page - Texas Instruments |
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DRV83055PHPR Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 59 page  6 DRV8305 SLVSCX2B – AUGUST 2015 – REVISED FEBRUARY 2016 www.ti.com Product Folder Links: DRV8305 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 (1) IC is fully functional and tested in the range 4.4 to 45 V. (2) Subject to thermal dissipation limits. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VPVDD Power supply voltage 4.4 45 (1) V VPVDD Power supply voltage for voltage regulator operation 4.3 45 (2) V VPVDDRAMP Power supply voltage ramp rate (PVDD = 0 to 20 V rising <3-mA pin sink current) 1 V/µs VPVDD-SH_X Total voltage drop from PVDD to SH_X pins 4.5 V ISRC_VCPH External load on VCPH pin (current limit resistor in series to load) 10 mA CO_OPA Maximum external capacitive load on shunt amplifier (no external resistor on output, excluding internal pin capacitance) 60 pF InFAULT nFAULT sink current (VnFAULT = 0.3 V) 7 mA Fgate Operating switching frequency of gate driver 200 kHz IGATE Total average gate driver current (HS + LS) – charge pump limited 30 mA TA Operating ambient temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC (1) DRV8305 UNIT PHP (HTQFP) 48 PINS RθJA Junction-to-ambient thermal resistance 26.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 12.9 °C/W RθJB Junction-to-board thermal resistance 7.6 °C/W ψJT Junction-to-top characterization parameter 0.3 °C/W ψJB Junction-to-board characterization parameter 7.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.6 °C/W |
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