1

Subject to change without notice.

www.cree.com/rf

CGHV40100

100 W, DC - 4.0 GHz, 50 V, GaN HEMT

Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGHV40100, operating from a 50 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efficiency, high gain and

wide bandwidth capabilities making the CGHV40100 ideal for linear and

compressed amplifier circuits. The transistor is available in a 2-lead flange

and pill package.

Package Types: 440193 & 440206

PN: CGHV40100F & CGHV40100P

Features

• Up to 4 GHz Operation

• 100 W Typical Output Power

• 17.5 dB Small Signal Gain at 2.0 GHz

• Application Circuit for 0.5 - 2.5 GHz

• 55 % Efficiency at P

SAT

• 50 V Operation

Parameter

500 MHz

1.0 GHz

1.5 GHz

2.0 GHz

2.5 GHz

Units

Small Signal Gain

17.6

16.9

17.7

17.5

14.8

dB

Saturated Output Power

147

100

141

116

112

W

Drain Efficiency @ P

SAT

68

56

58

54

54

%

Input Return Loss

6

5.1

10.5

5.5

8.8

dB

Note:

Measured CW in the CGHV40100F-AMP application circuit.