CGHV40100 datasheet(2/11 Pages) CREE

Part #	CGHV40100

Description	100 W, DC - 4.0 GHz, 50 V, GaN HEMT

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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2

CGHV40100 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Conditions

Drain-Source Voltage

V

DSS

125

Volts

25˚C

Gate-to-Source Voltage

V

GS

-10, +2

Volts

25˚C

Storage Temperature

T

STG

-65, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

20.8

mA

25˚C

Maximum Drain Current1

I

DMAX

8.7

A

25˚C

Soldering Temperature2

T

S

245

˚C

Screw Torque

τ

40

in-oz

Thermal Resistance, Junction to Case3

R

θ

JC

1.62

˚C/W

85˚C

Thermal Resistance, Junction to Case4

R

θ

JC

1.72

˚C/W

85˚C

Case Operating Temperature5

T

C

-40, +150

˚C

30 seconds

Note:

1

Current limit for long term, reliable operation

2

Refer to the Application Note on soldering at www.cree.com/RF/Document-Library

3

Measured for the CGHV40100P at P

DISS = 83 W.

4

Measured for the CGHV40100F at P

DISS = 83 W.

5

See also, Power Derating Curve on Page 7

Electrical Characteristics (T

C = 25˚C)

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics1

Gate Threshold Voltage

V

GS(th)

-3.8

-3.0

-2.3

V

DC

V

DS = 10 V, ID = 20.8 mA

Gate Quiescent Voltage

V

GS(Q)

–

-2.7

–

V

DC

V

DS = 50 V, ID = 0.6 A

Saturated Drain Current2

I

DS

15.6

18.7

–

A

V

DS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage

V

BR

150

–

V

DC

V

GS = -8 V, ID = 20.8 mA

RF Characteristics3 (T

C = 25˚C, F0 = 2.0 GHz unless otherwise noted)

Small Signal Gain

G

SS

–

17.5

–

dB

V

DD = 50 V, IDQ = 0.6 A

Power Gain

G

P

–

11.0

–

dB

V

DD = 50 V, IDQ = 0.6 A, POUT = PSAT

Power Output at Saturation4

P

SAT

–

116

–

W

V

DD = 50 V, IDQ = 0.6 A

Drain Efficiency

η

–

54

–

%

V

DD = 50 V, IDQ = 0.6 A, POUT = PSAT

Output Mismatch Stress

VSWR

–

10 : 1

Y

No damage at all phase angles,

V

DD = 50 V, IDQ = 0.6 A,

P

OUT = 100 W CW

Dynamic Characteristics5

Input Capacitance

C

GS

–

29.3

–

pF

V

DS = 50 V, Vgs = -8 V, f = 1 MHz

Output Capacitance

C

DS

–

7.3

–

pF

V

DS = 50 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance

C

GD

–

0.61

–

pF

V

DS = 50 V, Vgs = -8 V, f = 1 MHz

Notes:

1

Measured on wafer prior to packaging.

2

Scaled from PCM data.

3

Measured in CGHV40100-AMP

4

P

SAT is defined as IG

5

Includes package

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