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CGHV40100 Datasheet(PDF) 2 Page - Cree, Inc |
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CGHV40100 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 11 page 2 CGHV40100 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V DSS 125 Volts 25˚C Gate-to-Source Voltage V GS -10, +2 Volts 25˚C Storage Temperature T STG -65, +150 ˚C Operating Junction Temperature T J 225 ˚C Maximum Forward Gate Current I GMAX 20.8 mA 25˚C Maximum Drain Current1 I DMAX 8.7 A 25˚C Soldering Temperature2 T S 245 ˚C Screw Torque τ 40 in-oz Thermal Resistance, Junction to Case3 R θ JC 1.62 ˚C/W 85˚C Thermal Resistance, Junction to Case4 R θ JC 1.72 ˚C/W 85˚C Case Operating Temperature5 T C -40, +150 ˚C 30 seconds Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGHV40100P at P DISS = 83 W. 4 Measured for the CGHV40100F at P DISS = 83 W. 5 See also, Power Derating Curve on Page 7 Electrical Characteristics (T C = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V GS(th) -3.8 -3.0 -2.3 V DC V DS = 10 V, ID = 20.8 mA Gate Quiescent Voltage V GS(Q) – -2.7 – V DC V DS = 50 V, ID = 0.6 A Saturated Drain Current2 I DS 15.6 18.7 – A V DS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage V BR 150 – – V DC V GS = -8 V, ID = 20.8 mA RF Characteristics3 (T C = 25˚C, F0 = 2.0 GHz unless otherwise noted) Small Signal Gain G SS – 17.5 – dB V DD = 50 V, IDQ = 0.6 A Power Gain G P – 11.0 – dB V DD = 50 V, IDQ = 0.6 A, POUT = PSAT Power Output at Saturation4 P SAT – 116 – W V DD = 50 V, IDQ = 0.6 A Drain Efficiency η – 54 – % V DD = 50 V, IDQ = 0.6 A, POUT = PSAT Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, V DD = 50 V, IDQ = 0.6 A, P OUT = 100 W CW Dynamic Characteristics5 Input Capacitance C GS – 29.3 – pF V DS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance C DS – 7.3 – pF V DS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance C GD – 0.61 – pF V DS = 50 V, Vgs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV40100-AMP 4 P SAT is defined as IG 5 Includes package |
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