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CGHV35150P Datasheet(PDF) 1 Page - Cree, Inc |
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CGHV35150P Datasheet(HTML) 1 Page - Cree, Inc |
1 / 10 page 1 Subject to change without notice. www.cree.com/rf CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Typical Performance 3.1 - 3.5 GHz (T C = 85˚C) Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz Units Output Power 180 180 180 170 150 dB Gain 13.5 13.5 13.5 13.3 12.7 dBc Drain Efficiency 50 49 50 49 48 % Note: Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, P IN = 39 dBm Features: • Rated Power = 150 W @ T CASE = 85°C • Operating Frequency = 2.9 - 3.5 GHz • Transient 100 µsec - 300 µsec @ 20% Duty Cycle • 13.5 dB Power Gain @ T CASE = 85°C • 50 % Typical Drain Efficiency @ T CASE = 85°C • Input Matched • <0.3 dB Pulsed Amplitude Droop Package Type: 440193 / 440206 PN: CGHV35150F / CGHV35150P |
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