1

Subject to change without notice.

www.cree.com/rf

CGHV27060MP

60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications

Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor

(HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a

broadband device with no internal input or output match which allows for the agility

to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP

makes for an excellent transistor for pulsed applications at UHF, L Band or low S

Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation

amplifiers in the power class of 10 to 15W average power in high efficiency topologies

such as Class A/B, F or Doherty amplifiers.

PN: CGHV27060MP

Features - WCDMA

•

2.5 - 2.7 GHz Reference Design Amplifier

•

18.5 dB Gain at 14 W P

AVE

•

-35 dBc ACLR at 14 W P

AVE

•

35% Efficiency at 14 W P

AVE

•

High Degree of DPD Correction Can be Applied

Parameter

2.5 GHz

2.6 GHz

2.7 GHz

Units

Gain @ 41.5 dBm Avg P

OUT

18.25

18.5

18.25

dB

ACLR @ 41.5 dBm Avg P

OUT

-34

-37

-38

dBc

Drain Efficiency @ 41.5 dBm Avg P

OUT

33

35

33

%

Note:

Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF, V

Parameter

2.5 GHz

2.6 GHz

2.7 GHz

Units

Gain

16.5

16.3

16.2

dB

Output Power

84

82

79

W

Drain Efficiency

71

69

65

%

Note:

Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, P

PRELIMINARY

Features - Pulsed

•

16.5 dB Gain at Pulsed P

SAT

•

70% Efficiency at Pulsed P

SAT

•

80W at Pulsed P

SAT