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CGHV27060MP-AMP1 Datasheet(PDF) 1 Page - Cree, Inc |
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CGHV27060MP-AMP1 Datasheet(HTML) 1 Page - Cree, Inc |
1 / 8 page 1 Subject to change without notice. www.cree.com/rf CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation amplifiers in the power class of 10 to 15W average power in high efficiency topologies such as Class A/B, F or Doherty amplifiers. PN: CGHV27060MP Features - WCDMA • 2.5 - 2.7 GHz Reference Design Amplifier • 18.5 dB Gain at 14 W P AVE • -35 dBc ACLR at 14 W P AVE • 35% Efficiency at 14 W P AVE • High Degree of DPD Correction Can be Applied Typical Performance Over 2.5 - 2.7 GHz (T C = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Gain @ 41.5 dBm Avg P OUT 18.25 18.5 18.25 dB ACLR @ 41.5 dBm Avg P OUT -34 -37 -38 dBc Drain Efficiency @ 41.5 dBm Avg P OUT 33 35 33 % Note: Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, V DD = 50 V, IDS = 125 mA. Typical Performance Over 2.5 - 2.7 GHz (T C = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Gain 16.5 16.3 16.2 dB Output Power 84 82 79 W Drain Efficiency 71 69 65 % Note: Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, P IN = 33 dBm. PRELIMINARY Features - Pulsed • 16.5 dB Gain at Pulsed P SAT • 70% Efficiency at Pulsed P SAT • 80W at Pulsed P SAT |
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