1

Subject to change without notice.

www.cree.com/rf

CGHV27015S

15 W, DC - 6.0 GHz, 50 V, GaN HEMT

Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor

(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities,

which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The

CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications

from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as

well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device

provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S

of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-

no-lead (DFN) package.

Package Type: 3x4 DFN

PN: CGHV27015S

Features for 50 V in CGHV27015S-AMP1

AVE

AVE

AVE

Parameter

2.4 GHz

2.5 GHz

2.6 GHz

2.7 GHz

Units

Small Signal Gain

23

22

21.7

21.2

dB

Adjacent Channel Power @ P

-36.7

-40.7

-42.4

-42.5

dBc

Drain Efficiency @ P

35.9

33.5

30.4

30.2

%

Input Return Loss

-9.312

-9.6

-8.6

-7.8

dB

Note:

Measured in the CGHV27015S-AMP1 application circuit.

Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.