1

Subject to change without notice.

www.cree.com/rf

CGHV1F006S

6 W, DC - 18 GHz, 40V, GaN HEMT

Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor

(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.

The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet

specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application

circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 -

9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm,

surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can

operate below 40V to as low as 20V V

Package Type: 3x4 DFN

PN: CGHV1F006S

Features for 40 V in CGHV1F006S-AMP

•

Up to 18 GHz Operation

•

8 W Typical Output Power

•

17 dB Gain at 6.0 GHz

•

15 dB Gain at 9.0 GHz

•

Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz.

•

High degree of APD and DPD correction can be applied

Parameter

5.5 GHz

6.0 GHz

6.5 GHz

Units

Small Signal Gain

15.4

16.5

17.8

dB

Output Power @ P

38.6

39.3

39.0

dBm

Drain Efficiency @ P

55

57

52

%

Note:

Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty.

Listing of Available Hardware Application Circuits / Demonstration Circuits

Application Circuit

Operating Frequency

Amplifier Class

Operating Voltage

CGHV1F006S-AMP1

5.85 - 7.2 GHz

Class A/B

40 V

CGHV1F006S-AMP2

7.9 - 8.4 GHz

Class A/B

40 V

CGHV1F006S-AMP3

8.5 - 9.6 GHz

Class A/B

40 V

CGHV1F006S-AMP4

4.9 - 5.9 GHz

Class A/B

20 V