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CGH40025 Datasheet(PDF) 2 Page - Cree, Inc

Part No. CGH40025
Description  25 W, RF Power GaN HEMT
Download  14 Pages
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Maker  CREE [Cree, Inc]
Homepage  http://www.cree.com/
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CGH40025 Datasheet(HTML) 2 Page - Cree, Inc

 
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CGH40025 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
V
DSS
84
Volts
25˚C
Gate-to-Source Voltage
V
GS
-10, +2
Volts
25˚C
Storage Temperature
T
STG
-65, +150
˚C
Operating Junction Temperature
T
J
225
˚C
Maximum Forward Gate Current
I
GMAX
7.0
mA
25˚C
Maximum Drain Current1
I
DMAX
3
A
25˚C
Soldering Temperature2
T
S
245
˚C
Screw Torque
τ
60
in-oz
Thermal Resistance, Junction to Case3
R
θ
JC
4.8
˚C/W
85˚C
Case Operating Temperature3,4
T
C
-40, +150
˚C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www,cree.com/RF/Document-Library
3
Measured for the CGH40025F at P
DISS = 28 W.
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (T
C = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
V
GS(th)
-3.8
-3.0
-2.3
V
DC
V
DS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
V
GS(Q)
-2.7
V
DC
V
DS = 28 V, ID = 250 mA
Saturated Drain Current
I
DS
5.8
7.0
A
V
DS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
V
BR
120
V
DC
V
GS = -8 V, ID = 7.2 mA
RF Characteristics2 (T
C = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain
G
SS
12
13
dB
V
DD = 28 V, IDQ = 250 mA
Power Output3
P
SAT
20
30
W
V
DD = 28 V, IDQ = 250 mA
Drain Efficiency4
η
55
62
%
V
DD = 28 V, IDQ = 250 mA, PSAT
Output Mismatch Stress
VSWR
10 : 1
Y
No damage at all phase angles,
V
DD = 28 V, IDQ = 250 mA,
P
OUT = 25 W CW
Dynamic Characteristics
Input Capacitance
C
GS
9.0
pF
V
DS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
C
DS
2.6
pF
V
DS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
C
GD
0.4
pF
V
DS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1
Measured on wafer prior to packaging.
2
Measured in CGH40025-AMP.
3
P
SAT is defined as IG = 0.72 mA.
4
Drain Efficiency = P
OUT / PDC


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