1

Subject to change without notice.

www.cree.com/wireless

CGH40010

10 W, RF Power GaN HEMT

Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40010, operating from a 28 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efficiency, high gain and

wide bandwidth capabilities making the CGH40010 ideal for linear and

compressed amplifier circuits. The transistor is available in both screw-

down, flange and solder-down, pill packages.

FEATURES

• Up to 6 GHz Operation

• 16 dB Small Signal Gain at 2.0 GHz

• 14 dB Small Signal Gain at 4.0 GHz

• 13 W typical P

SAT

• 65 % Efficiency at P

SAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

Package Types: 440166, & 440196

PN’s: CGH40010F & CGH40010P