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CGH35060F1 Datasheet(PDF) 6 Page - Cree, Inc |
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CGH35060F1 Datasheet(HTML) 6 Page - Cree, Inc |
6 / 12 page 6 CGH35060F1 / CGH35060P1 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/rf Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Source and Load Impedances Frequency (MHz) Z Source Z Load 3300 3.5 - j12.1 6.5 - j6.8 3400 3.5 - j11.4 6.0 - j5.9 3500 3.3 - j10.7 5.6 - j5.1 3600 3.2 - j10.0 5.4 - j4.3 Note1: V DD = 28V, IDQ = 250mA. In the 440193 package. Note2: Impedances are extracted from the CGH35060F1-AMP demonstration circuit and are not source and load pull data derived from the transistor. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C D Z Source Z Load G S |
Similar Part No. - CGH35060F1 |
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Similar Description - CGH35060F1 |
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