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CGH27030S-AMP1 Datasheet(PDF) 1 Page - Cree, Inc |
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CGH27030S-AMP1 Datasheet(HTML) 1 Page - Cree, Inc |
1 / 16 page 1 Subject to change without notice. www.cree.com/rf CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Cree’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Package Type: 3x4 DFN PN: CGH27030S Typical Performance 1.8 - 2.2 GHz (T C = 25˚C) , 28 V Parameter 1.8 GHz 2.0 GHz 2.2 GHz Units Small Signal Gain 20.0 20.4 19.5 dB Adjacent Channel Power @ P OUT =5 W -39.5 -42.1 -39.1 dBc Drain Efficiency @ P OUT = 5 W 31.8 32.8 33.8 % Input Return Loss -4.2 -6.4 -7.7 dB Note: Measured in the CGH27030S-AMP1 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Typical Performance 2.3 - 2.7 GHz (T C = 25˚C) , 28 V Parameter 2.3 GHz 2.5 GHz 2.7 GHz Units Small Signal Gain 21.1 20.6 20.0 dB Adjacent Channel Power @ P OUT =3.2 W -32.0 -36.4 -33.6 dBc Drain Efficiency @ P OUT = 3.2 W 37.8 36.2 35.0 % Input Return Loss -7.3 -7.9 -7.2 dB Note: Measured in the CGH27030S-AMP2 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Features for 28 V in CGH27030S-AMP1 • 1.8 - 2.2 GHz Operation • 30 W Typical Output Power • 18 dB Gain at 5 W P AVE • -39 dBc ACLR at 5 W P AVE • 33% efficiency at 5 W P AVE • High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-AMP2 • 2.3 - 2.7 GHz Operation • 30 W Typical Output Power • 18.5 dB Gain at 5 W P AVE • -39 dBc ACLR at 5 W P AVE • 36% efficiency at 5 W P AVE • High degree of APD and DPD correction can be applied |
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