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C470TR260-S2700 Datasheet(PDF) 2 Page - Cree, Inc |
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C470TR260-S2700 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 6 page Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc. 2 CPR3DK Rev C Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Maximum Ratings at T A = 25°C Notes 1&3 CxxxTR260-Sxx00 DCForwardCurrent 50mA PeakForwardCurrent(1/10dutycycle@1kHz) 100mA LEDJunctionTemperature 125°C ReverseVoltage 5V OperatingTemperatureRange -40°Cto+100°C LEDChipStorageTemperatureRange -40°Cto+120°C DieSheetStorageConditions ≤30°C/≤85%RH ElectrostaticDischargeThreshold(HBM)Note2 1000V ElectrostaticDischargeClassification(MIL-STD-883E)Note2 Class2 Typical Electrical/Optical Characteristics at T A = 25°C, If = 20 mA Note 3 Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λ D, nm) Min. Typ. Max. Max. Typ. C450TR260-Sxx00 2.7 3.1 3.4 2 20 C460TR260-Sxx00 2.7 3.1 3.4 2 21 C470TR260-Sxx00 2.7 3.1 3.4 2 21 C527TR260-Sxx00 2.9 3.2 3.6 2 35 Mechanical Specifications CxxxTR260-Sxx00 Description Dimension Tolerance P-NJunctionArea(μm) 220x440 ±35 ChipArea(μm) 260x480 ±35 ChipThickness(μm) 115 ±15 AuBondPadDiameterAnode(μm) 90 -5,+15 AuBondPadThicknesses(μm) 1.0 ±0.5 AuBondPadAreaCathode(μm) 98x98 -5,+15 BottomArea(μm) 160x380 ±35 Notes: 1. Maximumratingsarepackagedependent.TheaboveratingsweredeterminedusingaT-13/4package(withHysolOS4000epoxy encapsulationandclearepoxydieattach)forcharacterization.Ratingsforotherpackagesmaydiffer.Theforwardcurrents(DC andPeak)arenotlimitedbythediebutbytheeffectoftheLEDjunctiontemperatureonthepackage.Thejunctiontemperature limitof125°CisalimitoftheT-13/4package;junctiontemperatureshouldbecharacterizedinaspecificpackagetodetermine limitations.Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds). 2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.TheRAETprocedureis performedoneachdie.TheESDclassificationofClass2isbasedonsampletestingaccordingtoMIL-STD-883E. 3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembled andoperatedat20mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgiven arewithintherangeofaveragevaluesexpectedbythemanufacturerinlargequantitiesandareprovidedforinformationonly.All measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxyencapsulantandclearepoxydieattach). OpticalcharacteristicsaremeasuredinanintegratingsphereusingIlluminanceE. 4. Specificationsaresubjecttochangewithoutnotice. |
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