1

Subject to change without notice.

www.cree.com

Data Sheet (Cathode-up)

CxxxEZ290-Sxx00-2

with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The

optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these

LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. These

vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are

tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,

such as wearable devices, video displays and LCD backlighting.

CxxxEZ290-Sxx00-2 Chip Diagram

FEATURES

•

Lambertian Radiation Pattern

•

Cathode-up design (n-pad up)

•

EZBright LED Technology, binned @ 20 mA

–

450 nm – 24+ mW

–

460 nm – 24+ mW

–

470 nm – 21+ mW

–

527 nm – 8+ mW

•

Low Forward Voltage (Vf) – 3.0 V Typical at 20 mA

•

Maximum DC Forward Current – 50 mA

•

AuSn Backside Metal for use with Conductive Adhesives,

Flux Eutectic Attach, Solder Paste & Solder Preforms

APPLICATIONS

•

LCD Backlighting

–

Mobile Devices

–

Monitors

•

Video Displays

•

Wearable Devices

•

Automotive Interior

Top View

Anode (+)

Cathode (-), Ø100

µm

Mesa (Junction)

225 x 225

µm

Side View

Bottom View

Backside Ohmic

Metallization

Thickness

170

µm

280 x 280

µm