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C430CB290-S2100 Datasheet(PDF) 2 Page - Cree, Inc

Part # C430CB290-S2100
Description  SuperBlue Generation II LEDs
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

C430CB290-S2100 Datasheet(HTML) 2 Page - Cree, Inc

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Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
2
CPR3DN Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Maximum Ratings at T
A = 25°C
Notes 1&3
C430CB290-S2100
DCForwardCurrent
30mA
PeakForwardCurrent(1/10dutycycle@1kHz)
70mA
LEDJunctionTemperature
125°C
ReverseVoltage
5V
OperatingTemperatureRange
-40°Cto+100°C
StorageTemperatureRange
-40°Cto+100°C
ElectrostaticDischargeThreshold(HBM)Note2
1000V
ElectrostaticDischargeClassification(MIL-STD-883E)Note2
Class2
Typical Electrical/Optical Characteristics at T
A = 25°C, If = 20 mA
Note 3
Part Number
Forward
Voltage
(V
f, V)
Radiant Flux
(P, mW)
Reverse
Current
[I(Vr=5V), μA]
Peak
Wavelength
d, nm)
Dominant
Wavelength
d, nm)
Full Width
Half Max
D, nm)
Typ.
Max.
Min.
Typ.
Max.
Typ.
Min.
Typ.
Max.
Typ.
C430CB290-S2100
4.0
4.5
0.85
1.3
10
423
461
463
465
59
Mechanical Specifications
C430CB290-S2100
Description
Dimension
Tolerance
P-NJunctionArea(μm2)
240x240
±35
TopArea(μm2)
260x260
±35
BottomArea(μm2)
260x260
±35
ChipThickness(μm)
250
±25
AuBondPadDiameter(μm)
114
±20
AuBondPadThickness(μm)
1.1
±0.5
BackContactMetalDiameter(μm)
114
±20
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy)forcharacterization.Ratingsforotherpackagesmaydiffer.Theforwardcurrents(DCandPeak)arenotlimitedbythedie
butbytheeffectoftheLEDjunctiontemperatureonthepackage.Thejunctiontemperaturelimitof125°CisalimitoftheT-1
3/4package;junctiontemperatureshouldbecharacterizedinaspecificpackagetodeterminelimitations.Assemblyprocessing
temperaturemustnotexceed325°C(<5seconds).
2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche
energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.TheESDclassification
ofClass2isbasedonsampletestingaccordingtoMIL-STD-883E.
3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembled
andoperatedat20mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgiven
arewithintherangeofaveragevaluesexpectedbythemanufacturerinlargequantitiesandareprovidedforinformationonly.All
measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxy).Opticalcharacteristicsmeasuredinan
integratingsphereusingIlluminanceA.


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