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C430CB290-S2100 Datasheet(PDF) 2 Page - Cree, Inc |
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C430CB290-S2100 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 4 page Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc. 2 CPR3DN Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Maximum Ratings at T A = 25°C Notes 1&3 C430CB290-S2100 DCForwardCurrent 30mA PeakForwardCurrent(1/10dutycycle@1kHz) 70mA LEDJunctionTemperature 125°C ReverseVoltage 5V OperatingTemperatureRange -40°Cto+100°C StorageTemperatureRange -40°Cto+100°C ElectrostaticDischargeThreshold(HBM)Note2 1000V ElectrostaticDischargeClassification(MIL-STD-883E)Note2 Class2 Typical Electrical/Optical Characteristics at T A = 25°C, If = 20 mA Note 3 Part Number Forward Voltage (V f, V) Radiant Flux (P, mW) Reverse Current [I(Vr=5V), μA] Peak Wavelength (λ d, nm) Dominant Wavelength (λ d, nm) Full Width Half Max (λ D, nm) Typ. Max. Min. Typ. Max. Typ. Min. Typ. Max. Typ. C430CB290-S2100 4.0 4.5 0.85 1.3 10 423 461 463 465 59 Mechanical Specifications C430CB290-S2100 Description Dimension Tolerance P-NJunctionArea(μm2) 240x240 ±35 TopArea(μm2) 260x260 ±35 BottomArea(μm2) 260x260 ±35 ChipThickness(μm) 250 ±25 AuBondPadDiameter(μm) 114 ±20 AuBondPadThickness(μm) 1.1 ±0.5 BackContactMetalDiameter(μm) 114 ±20 Notes: 1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)forcharacterization.Ratingsforotherpackagesmaydiffer.Theforwardcurrents(DCandPeak)arenotlimitedbythedie butbytheeffectoftheLEDjunctiontemperatureonthepackage.Thejunctiontemperaturelimitof125°CisalimitoftheT-1 3/4package;junctiontemperatureshouldbecharacterizedinaspecificpackagetodeterminelimitations.Assemblyprocessing temperaturemustnotexceed325°C(<5seconds). 2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.TheESDclassification ofClass2isbasedonsampletestingaccordingtoMIL-STD-883E. 3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembled andoperatedat20mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgiven arewithintherangeofaveragevaluesexpectedbythemanufacturerinlargequantitiesandareprovidedforinformationonly.All measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxy).Opticalcharacteristicsmeasuredinan integratingsphereusingIlluminanceA. |
Similar Part No. - C430CB290-S2100_16 |
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Similar Description - C430CB290-S2100_16 |
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