Electronic Components Datasheet Search |
|
SIDC24D60SIC3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
|
SIDC24D60SIC3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIDC24D60SIC3 Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 Silicon Carbide Schottky Diode Applications: • SMPS, PFC, snubber FEATURES: • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery A C Chip Type VBR IF Die Size Package Ordering Code SIDC24D60SIC3 600V 8A 1.706 x 1.38 mm 2 sawn on foil Q67050-A4281- A101 MECHANICAL PARAMETER: Raster size 1.706x 1.38 Anode pad size 1.405 x 1.08 mm Area total / active 2.354 / 1.548 mm 2 Thickness 355 µm Wafer size 75 mm Flat position 0 deg Max. possible chips per wafer 1649 pcs Passivation frontside Photoimide Anode metalization 3200 nm Al Cathode metalization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, ≤ 350µm Reject Ink Dot Size ∅ ≥ 0.3 mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
Similar Part No. - SIDC24D60SIC3 |
|
Similar Description - SIDC24D60SIC3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |