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SIDC24D30SIC3 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SIDC24D30SIC3
Description  Silicon Carbide Schottky Diode
Download  4 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SIDC24D30SIC3 Datasheet(HTML) 2 Page - Infineon Technologies AG

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SIDC24D30SIC3
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
V RRM
300
Surge peak reverse voltage
V RSM
300
V
Continuous forward current limited by
Tjmax
I F
10
Single pulse forward current
(depending on wire bond configuration)
I FSM
TC =25° C, tP =10 ms sinusoidal
36
Maximum repetitive forward current
limited by Tjmax
I FRM
TC = 100° C, Tj=150 ° C,
D=0.1
45
Non repetitive peak forward current
I FMAX
TC =25° C, tp=10µs
100
A
Operating junction and storage
temperature
Tj , Tstg
-55...+175
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Reverse leakage current
I R
V R=300V
Tj=25 ° C
15
200
µA
Forward voltage drop
V F
I F=10A
Tj=25 ° C
1.5
1.7
V
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Total capacitive charge
QC
IF=10A
di/dt=200A/
µs
VR=200V
Tj = 150 °C
23
nC
Switching time
t rr
IF=10A
di/dt=200A/
µs
VR= 200V
Tj = 150 °C
n.a.
ns
V R= 1V
600
V R=150V
55
Total capacitance
C
IF=10A
di/dt=200A/
µs
T j =25
°C
f=1MHz
V R=300V
40
pF


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