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SIDC11D60SIC3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SIDC11D60SIC3
Description  Silicon Carbide Schottky Diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SIDC11D60SIC3 Datasheet(HTML) 1 Page - Infineon Technologies AG

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SIDC11D60SIC3
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
Silicon Carbide Schottky Diode
Applications:
SMPS, PFC, snubber
FEATURES:
Worlds first 600V Schottky diode
Revolutionary semiconductor material -
Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on the switching
behavior
Ideal diode for Power Factor Correction
No forward recovery
A
C
Chip Type
VBR
IF
Die Size
Package
Ordering Code
SIDC11D60SIC3
600V
4A
1.15 x 0.97 mm
2
sawn on foil
Q67050-A4161-
A104
MECHANICAL PARAMETER:
Raster size
1.15 x 0.97
Anode pad size
0.85 x 0.67
mm
Area total / active
1.116 / 0.581
mm
2
Thickness
355
µm
Wafer size
75
mm
Flat position
0
deg
Max. possible chips per wafer
3555 pcs
Passivation frontside
Photoimide
Anode metalization
3200 nm Al
Cathode metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤ 250µm
Reject Ink Dot Size
∅ ≥ 0.3 mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C


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