C2M0080120D_15 datasheet(5/10 Pages) CREE

Part #	C2M0080120D

Description	Silicon Carbide Power MOSFET

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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C2M0080120D Rev. C, 10-2015

Typical Performance

Figure 15. 3rd Quadrant Characteristic at 150 ºC

Figure 13. 3rd Quadrant Characteristic at -55 ºC

-70

-60

-50

-40

-30

-20

-10

0

-6

-5

-4

-3

-2

-1

0

Drain-Source Voltage, VDS (V)

Conditions:

TJ = -55 °C

tp < 200 µs

VGS = 0 V

VGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

-70

-60

-50

-40

-30

-20

-10

0

-6

-5

-4

-3

-2

-1

0

Drain-Source Voltage, VDS (V)

Conditions:

TJ = 25 °C

tp < 200 µs

VGS = 0 V

VGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

-70

-60

-50

-40

-30

-20

-10

0

-6

-5

-4

-3

-2

-1

0

Drain-Source Voltage, VDS (V)

Conditions:

TJ = 150 °C

tp < 200 µs

VGS = 0 V

VGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

Figure 14. 3rd Quadrant Characteristic at 25 ºC

0

5

10

15

20

25

30

35

40

45

50

0

200

400

600

800

1000

1200

Drain to Source Voltage, VDS (V)

Figure 16. Output Capacitor Stored Energy

Figure 17. Capacitances vs. Drain-Source

Voltage(0-200V)

1

10

100

1000

10000

0

50

100

150

200

Drain-Source Voltage, VDS (V)

Ciss

Coss

Conditions:

TJ = 25 °C

VAC = 25 mV

f = 1 MHz

Crss

1

10

100

1000

10000

0

200

400

600

800

1000

Drain-Source Voltage, VDS (V)

Ciss

Coss

Conditions:

TJ = 25 °C

VAC = 25 mV

f = 1 MHz

Crss

Figure 18. Capacitances vs. Drain-Source

Voltage(0-1000V)

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