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ACE2308E Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2308E Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE2308E N-Channel 30-V MOSFET VER 1.1 1 Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current a TA=25℃ ID 3.5 A TA=70℃ 2.8 Pulse Drain Current b IDM 15 A Continuous Source Current (Diode Conduction) a IS 1.9 A Power Dissipation a TA=25℃ PD 1.3 W TA=70℃ 0.8 Operating Temperature / Storage Temperature TJ/TSTG -55/150 OC *1 Pw ≦ 10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t <= 10 sec RθJA 100 OC/W Steady State 166 Packaging Type SOT-23-3 D G S |
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