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PTF191601 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. PTF191601
Description  LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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PTF191601 Datasheet(HTML) 1 Page - Infineon Technologies AG

   
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Developmental Data Sheet
1 of 4
2004-03-17
Typical EDGE EVM Performance
VDD = 28 V, IDQ = 2.2 A, f = 1989.1 MHz
0
1
2
3
4
30
35
40
45
50
55
Output Power (dBm)
0
5
10
15
20
25
30
35
40
EVM
Efficiency
Advance Information
PTF191601
LDMOS RF Power Field Effect Transistor
160 W, 1930 – 1990 MHz
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 62 W
- Gain = 14 dB
- Efficiency = 32%
- EVM = 1.7%
Typical CW performance
- Output power at P–1dB = 180 W
- Gain = 13 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
160 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF191601 is a 160 W, internally matched GOLDMOS FET intended
for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
PTF191601E
Package 30260
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 2.2 A, POUT = 62 W, f = 1989.8 MHz
Characteristic
Symbol
Min
Typ
Max
Units
Error Vector Magnitude
EVM (RMS)
1.7
%
Modulation Spectrum @ 400 kHz
ACPR
–60
dBc
Modulation Spectrum @ 600 kHz
ACPR
–73
dBc
Gain
Gps
14
dB
Drain Efficiency
η
D
32
%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 2.2 A, POUT = 160 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Units
Gain
Gps
14
dB
Drain Efficiency
η
D
36
%
Intermodulation Distortion
IMD
–30
dBc


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