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PTF181301 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. PTF181301
Description  LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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PTF181301 Datasheet(HTML) 1 Page - Infineon Technologies AG

   
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Developmental Data Sheet
1 of 4
2004-04-28
EDGE EVM Performance
EVM & Efficiency vs. Output Power
VDD = 28 V, IDQ = 1.8 A, f = 1879.8 MHz
0
1
2
3
4
35
38
40
43
45
48
50
Output Power (dBm)
0
10
20
30
40
EVM
Efficiency
Developmental PTF181301
LDMOS RF Power Field Effect Transistor
130 W, 1805–1880 MHz
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 55 W
- Gain = 15.5 dB
- Efficiency = 32%
- EVM = 1.7%
Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 14.5 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF181301 is a 130 W, internally matched GOLDMOS FET intended
for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
PTF181301A
Package 20260
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.8 A, POUT = 55 W, f = 1879.8 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Error Vector Magnitude
EVM (RMS)
1.7
%
Modulation Spectrum @ 400 kHz
ACPR
–60
dBc
Modulation Spectrum @ 600 kHz
ACPR
–73
dBc
Gain
Gps
15.5
dB
Drain Efficiency
η
D
32
%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.8 A, POUT = 130 W PEP, f = 1880 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
15.5
dB
Drain Efficiency at –30 dBc IM3
η
D
35
%
Intermodulation Distortion
IMD
–30
dBc


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