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PTF180601 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. PTF180601
Description  LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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PTF180601 Datasheet(HTML) 1 Page - Infineon Technologies AG

 
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Data Sheet
1
2004-05-03
0
1
2
3
4
35
37
39
41
43
45
Output Power (dBm)
0
10
20
30
40
EDGE EVM Performance
EVM & Efficiency vs. Power Output
VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz
EVM
Efficiency
PTF180601C
Package 21248
LDMOS Field Effect Transistor
60 W, DCS/PCS Band
1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for
EDGE applications in the DCS/PCS Band. Full gold metallization ensures
excellent device lifetime and reliability.
Features
Broadband internal matching
Typical two-tone performance
- Average output power = 30 W
- Gain = 16.5 dB
- Efficiency = 35%
Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 15.5 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
PTF180601
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 800 mA, POUT = 22 W, f = 1989.8 MHz
Characteristic
Symbol
Min
Typ
Max
Units
Error Vector Magnitude
EVM (RMS)
1.7
%
Modulation Spectrum @ 400 KHz
ACPR
–60
dBc
Modulation Spectrum @ 600 KHz
ACPR
–73
dBc
Gain
Gps
16.5
dB
Drain Efficiency
ηD
32
%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 800 mA, POUT = 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Units
Gain
Gps
15
16.5
dB
Drain Efficiency
ηD
30
35
%
Intermodulation Distortion
IMD
–30
–28
dBc
ESD: Electrostatic discharge sensitive device — observe handling precautions!
PTF180601E
Package 30248


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