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UF600G Datasheet(PDF) 1 Page - Diotec Semiconductor |
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UF600G Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page UF600A ... UF600M UF600A ... UF600M Ultrafast Switching Silicon Rectifier Diodes – Ultraschnelle Silizium-Gleichrichterdioden Version 2012-10-01 Dimensions - Maße [mm] Nominal current Nennstrom 6 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse Ø 8 x 7.5 [mm] P600 Style Weight approx. Gewicht ca. 1.3 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] UF600A 50 50 UF600B 100 100 UF600D 200 200 UF600G 400 400 UF600J 600 600 UF600K 800 800 UF600M 1000 1000 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 50°C IFAV 6 A 1) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 60 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 270/300 A Rating for fusing, Grenzlastintegral, t < 10 ms TA = 25°C i2t 370 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+175°C -50...+175°C 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Type Ø 1.2 ±0.05 Ø 8±0.1 |
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