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IR11688S Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IR11688S Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 27 page IR11688S 7 2016-1-18 Electrical Characteristics VCC=12V, TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to GND (pin7). Gate Driver Section Parameters Symbol Min. Typ. Max. Units Remarks Gate Low Voltage VGLO --- 0.15 0.25 V IGATE = 100mA Gate High Voltage VGTH --- 11.9 --- V GBD --- 4.9 --- GBD Rise Time tr --- 20 38 ns CLOAD = 1nF Fall Time tf --- 10 22 ns CLOAD = 1nF Turn on Propagation Delay tDon --- 200 250 ns VDS to VGATE – VDS goes down from 6V to -1V Turn off Propagation Delay tDoff --- 42 60 ns VDS to VGATE –VDS goes up from -1V to 6V Pull up Resistance rup --- 6 --- Ω GBD Pull down Resistance rdown --- 1.5 --- Ω IGATE = -100mA Output Peak Current (source) IO source --- 1 --- A GBD Output Peak Current (sink) IO sink --- 4 --- A GBD GBD – parameter is guaranteed by design and is not tested. |
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