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STTH16L06C-Y Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH16L06C-Y Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 9 page DocID026936 Rev 2 5/9 STTH16L06C-Y Characteristics 9 Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Transient peak forward voltage versus dI F/dt (typical values, per diode) Figure 9. Forward recovery time versus dI F/dt (typical values, per diode) Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 IRM QRR trr S factor T (°C) j I=I Reference: T =125°C F F(AV) j V =400V R 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 50 100 150 200 250 300 350 400 450 500 V (V) FP dI /dt(A/µs) F I=I T =125°C F F(AV) j 0 20 40 60 80 100 120 140 160 180 0 100 200 300 400 500 t (ns) fr dI /dt(A/µs) F I=I T =125°C F F(AV) j V =1.1 x V max. FR F 1 10 100 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j |
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