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STL135N8F7AG Datasheet(PDF) 3 Page - STMicroelectronics |
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STL135N8F7AG Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 14 page STL135N8F7AG Electrical ratings DocID028274 Rev 3 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at Tcase = 25 °C 130 A Drain current (continuous) at Tcase = 100 °C 93 IDM(1)(2) Drain current (pulsed) 560 A ID(3) Drain current (continuous) at Tpcb = 25 °C 26 A Drain current (continuous) at Tpcb = 100 °C 19 IDM(2)(3) Drain current (pulsed) 104 A PTOT(1) Total dissipation at Tcase = 25 °C 135 W PTOT(3) Total dissipation at Tpcb = 25 °C 4.8 W EAS(4) Single pulse avalanche energy 1.2 J Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range Notes: (1) This value is rated according to Rthj-c. (2) Pulse width is limited by safe operating area. (3) This value is rated according to Rthj-pcb (4) Starting Tj = 25 °C, ID = 13 A, VDD = 50 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-pcb(1) Thermal resistance junction-pcb 31.3 °C/W Rthj-case Thermal resistance junction-case 1.1 Notes: (1) When mounted on a 1-inch² FR-4 board, 2oz Cu, t < 10 s |
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