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STL100N8F7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STL100N8F7 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 14 page STL100N8F7 Electrical ratings DocID027058 Rev 3 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at Tc= 25 °C 100 A ID(1) Drain current (continuous) at TC = 100 °C 71 A IDM(1)(2) Drain current (pulsed) 400 A ID(3) Drain current (continuous) at Tpcb = 25 °C 20 A ID(3) Drain current (continuous) at Tpcb = 100 °C 14 A IDM(3)(2) Drain current (pulsed) 80 A PTOT(1) Total dissipation at TC = 25 °C 120 W PTOT(3) Total dissipation at Tpcb = 25 °C 4.8 W EAS(4) Single pulse avalanche energy 220 mJ TJ Operating junction temperature -55 to 175 °C Tstg Storage temperature °C Notes: (1)This value is rated according to Rthj-c. (2)Pulse width limited by safe operating area. (3)This value is rated according to Rthj-pcb. (4)Starting TJ=25°C, ID=25 A, VDD=40 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.25 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 31.3 °C/W Notes: (1)When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec |
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