KP110

Data Book

5

2003-05

The table below shows the internal registers of the KP110. For the shaded registers

PROM cells exist. The PROM cells are used for permanent programming of the

calibration data.

In addition to the registers in the table below a 12 x 9 bit RAM table exists for the

linearization and definition of the analog pressure signal. This RAM table is also

overlayed by PROM cells.

To write a 9 bit word to the RAM table at first the data content must be written into the

MEMDAT register. In a further write cycle the desired word is addressed by the 4 LSBs

of the MEMCTL register.

Nonvolatile Memory

Each PROM cell consists of a thin polysilicon wire located in a small evacuated cavity.

The cells are called HR-fuses. In order to write a logic "1" to a HR-cell the wire has to be

cut with a current pulse. Since the current can reach up to 100 mA only a single HR-fuse

can be programmed at a time.

The desired bit within a HR-fuse register is addressed by a register called FUSE_NR. In

case of the linearization table the desired PROM register itself is addressed by the

MEMCTL-register. In order to program the GLOBOFF, TGAIN, TOFFL and TOFFQ

register the MODREG-register is used for addressing.

After the correct addressing of PROM register and bit a fuse pulse has to be applied to

pad 1. The requirements for the pulse voltage, length and slew rate are given in the

electrical characteristics.

The exact sequences for RAM/PROM reading/writing are available on request.

Register

Function

MEMDAT

Data bit 0 to 9

MEMCTL

Selection of register of linearization table

GLOBOFF

Global offset compensation

FUSE_NR

Fuse number

TESTREG

Selection of register for read cycle

TGAIN

Temperature gain compensation (linear and square)

TOFFL

Linear temperature offset compensation

TOFFQ

Square temperature offset compensation

MODEREG

Selection of registers for programming of PROM

The shaded registers in the table are overlayed with PROM