IR4301MTRPBF datasheet(9/15 Pages) IRF

Part #	IR4301MTRPBF

Description	High peak music power output

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IR43x1

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Electrical Characteristics

(cont’d)

VCC,VBS= 12 V, VSS=VS=VN=COM=0V, VAA=9.6V and TA=25C unless otherwise specified.

Symbol

Definition

Min

Typ

Max

Units

Test Conditions

Audio Input

(VGND=0, VAA=4.8V, VSS=-4.8V)

VOS

Input offset voltage

-18

0

18

mV

IBIN

Input bias current

-

40

nA

GBW

Small signal bandwidth

-

9

-

MHz

CCOMP=1nF,

Rf=0

gm

OTA transconductance

-

10

-

mS

VIN+=0V, VIN-

=10mV

GV

OTA gain

50

-

dB

PWM

VthPWM

PWM comparator threshold in

COMP

-

(VAA -VSS)/2

-

V

fOTA

COMP pin star-up local

oscillation frequency

0.7

1.0

1.5

MHz

VCSD =GND

Ton

COMP to VS rising edge

propagation delay

-

370

-

ns

Toff

COMP to VS trailing edge

propagation delay

-

320

-

ns

DT

Deadtime: Low-side turn-off to

High-side turn-on (DTLO-HO) &

High-side turn-off to Low-side

turn-on (DTHO-LO)

-

50

-

ns

VP=30V,

VN=-30V

Power MOSFET (FET1, FET2) (IR4301)

V(BR)DSS

Drain-to-Source breakdown

voltage

80

-

V

VGS=0V,

ID=250uA

RDS(ON)

FET on resistance

-

39

50

mΩ

VGS=10V, ID=3.3A

Qg

Total gate charge

-

7.3

-

nC

ILK0

VP leakage current, VS=VN

-

20

µA

VP=80V, VCSD

=VSS

ILK1

VP leakage current, VS=VP

-

50

µA

Power MOSFET (FET1, FET2) (IR4321)

V(BR)DSS

Drain-to-Source breakdown

voltage

60

-

V

VGS=0V,

ID=250uA

RDS(ON)

FET on resistance

-

30

40

mΩ

VGS=10V, ID=3.3A

Qg

Total gate charge

-

8.3

-

nC

ILK0

VP leakage current, VS=VN

-

20

µA

VP=60V, VCSD

=VSS

ILK1

VP leakage current, VS=VP

-

50

µA

Power MOSFET (FET1, FET2) (IR4311)

V(BR)DSS

Drain-to-Source breakdown

voltage

40

-

V

VGS=0V,

ID=250uA

RDS(ON)

FET on resistance

-

44

56

mΩ

VGS=10V, ID=3.6A

Qg

Total gate charge

-

4.5

-

nC

ILK0

VP leakage current, VS=VN

-

20

µA

VP=40V, VCSD

=VSS

ILK1

VP leakage current, VS=VP

-

50

µA

April 22, 2013

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