HYS64V64220GU datasheet(6/15 Pages) INFINEON

Part #	HYS64V64220GU

Description	3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules

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Manufacturer	INFINEON [Infineon Technologies AG]

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HYS 64/72V64220GU

SDRAM-Modules

INFINEON Technologies

6

9.01

Operating Currents per SDRAM Component

T

A = 0 to 70

oC, V

DD = 3.3 V ± 0.3 V

Parameter

Test

Condition

Symbol -7/ -7.5

-8

Unit Note

max.

Operating current

t

RC = tRC(MIN.), tCK = tCK(MIN.)

Outputs open, Burst Length = 4, CL = 3

All banks operated in random access,

all banks operated in ping-pong manner

to maximize gapless data access

–

I

CC1

230

170

mA

1, 2

Precharge stand-by current

in Power Down Mode

CS =

V

IH(MIN.), CKE ≤ VIL(MAX.)

t

CK =min.

I

CC2P

22

mA

1, 2

Precharge Stand-by Current

in Non-Power Down Mode

CS =

V

IH (MIN.), CKE ≥ VIH(MIN.)

t

CK =min.

I

CC2N

40

30

mA

1, 2

No operating current

t

CK = min., CS = VIH(MIN.),

active state (max. 4 banks)

CKE

≥ V

IH(MIN.)

I

CC3N

50

45

mA

1, 2

CKE

≤ V

IL(MAX.)

I

CC3P

10

mA

1, 2

Burst operating current

t

CK =min.,

Read command cycling

–

I

CC4

150

100

mA

1,2,3

Auto refresh current

t

CK =min.,

Auto Refresh command cycling

–

I

CC5

240

220

mA

1, 2

Self refresh current

Self Refresh Mode, CKE = 0.2 V

I

CC6

33

mA

1

Notes

1. All values are shown per one SDRAM component.

2. These parameters depend on the cycle rate. These values are measured at 133 MHz operation

frequency for -7 & -7.5 and at 100 MHz for -8 modules.

Input signals are changed once during

t

CK, excepts for ICC6 and for stand-by currents when

t

CK = infinity.

3. These parameters are measured with continuous data stream during read access and all DQ

toggling. CL = 3 and BL = 4 are assumed and the

data out current is excluded.

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