STL3N10F7 datasheet(6/13 Pages) STMICROELECTRONICS

Part #	STL3N10F7

Description	N-channel enhancement mode

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STL3N10F7

6/13

DocID025948 Rev 2

2.1

Electrical characteristics (curves)

Figure 2. Safe operating area

Figure 3. Thermal impedance

Figure 4. Output characteristics

Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage

Figure 7. Static drain-source on-resistance

ID

10

1

0.1

0.01

0.1

1

VDS(V)

10

(A)

Operation in this area is

Limited by max RDS(on)

100

μs

1ms

10ms

Tj=150°C

Tpcb=25°C

Sinlge

pulse

GIPG230120140925SA

Single pulse

δ=0.5

0.05

0.02

0.01

0.1

0.2

K

10

tp(s)

-4

10

-3

10

-2

10

-1

10

-5

10

-3

10

-2

10

-1

10

0

pcb

GIPG230120140958SA

ID

18

12

6

0

4

VDS(V)

(A)

26

24

30

6 V

5 V

7 V

8 V

9 V

VGS= 10 V

8

GIPG200120141028FSR

ID

15

10

5

0

4

VGS(V)

(A)

26

20

25

30

VDS= 9V

10

8

GIPG200120141040FSR

VGS

6

4

2

0

4

QG(nC)

(V)

26

8

10

12

VDD= 50V

ID= 4A

10

8

GIPG200120141048FSR

RDS(on)

62

61.6

61.2

60.8

0.5

1.5

ID(A)

(m

Ω)

1

2

62.4

VGS=10V

2.5

GIPG210120141012FSR

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STL3N10F7 Datasheet(PDF) 6 Page - STMicroelectronics

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