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HYE18P32161AC Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # HYE18P32161AC
Description  32M Asynchronous/Page CellularRAM
Download  33 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

HYE18P32161AC Datasheet(HTML) 8 Page - Infineon Technologies AG

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Data Sheet
8
V2.0, 2003-12-16
32M Asynchronous/Page CellularRAM
CellularRAM
HYE18P32161AC-70/L70
HYE18P32161AC-85/L85
1Overview
1.1
Features
High density (1T1C-cell) Synchronous 32-Mbit Pseudo-Static RAM
Designed for cell phone applications (CellularRAM)
Functional-compatible to conventional low power asynchronous SRAM devices
Organization 2M
× 16
Refresh-free operation
1.8 V single power supply (
V
DD and VDDQ)
Support of 2.5V and 3.0V I/O voltage options (
V
DDQ)
Low power optimized design
I
STANDBY = 90 µA for L-part and 120 µA for standard part (32M), data retention mode
I
DPD = < 25 µA (32M), non-data retention mode
Low power features (partly adopted from the JEDEC standardized low power SDRAM specifications)
– Temperature Compensated Self-Refresh (TCSR)
– Partial Array Self-Refresh (PASR)
– Deep Power Down Mode (DPD)
70 ns random access cycle time, 20 ns page mode (read only) cycle time
Byte read/write control by UB/LB
Wireless operating temperature range from -25 °C to +85 °C
P-VFBGA-48 chip-scale package (8
× 6 ball grid)
Table 1
Product Selection
HYE18P32161AC
-70
-85
L70
L85
Min. Random Cycle time (tRC)
70ns
85ns
70ns
85ns
Min. Page Read Cycle time (tPC)
20ns
25ns
20ns
25ns
Operating current (Icc1)
20mA
17mA
20mA
17mA
Stand-by current (Icc2)
120uA
90uA
Ordering Info
(Contact Factory)
H Y E
18
P
321 6
1
A
C
Chip Scale Package
Design Revision number
Device Type
32M (x16 Org)
V
DD = 1.8 V typ.
PSRAM product
1: Asynch/Page (48-ball)
Extended Temp. part


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