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ULN2003AINE4 Datasheet(PDF) 4 Page - Texas Instruments |
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ULN2003AINE4 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 34 page 4 ULN2002A, ULN2003A, ULN2003AI ULQ2003A, ULN2004A, ULQ2004A SLRS027O – DECEMBER 1976 – REVISED JANUARY 2016 www.ti.com Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A Submit Documentation Feedback Copyright © 1976–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted. 6 Specifications 6.1 Absolute Maximum Ratings at 25°C free-air temperature (unless otherwise noted) (1) MIN MAX UNIT VCC Collector-emitter voltage 50 V Clamp diode reverse voltage(2) 50 V VI Input voltage(2) 30 V Peak collector current, See Figure 4 and Figure 5 500 mA IOK Output clamp current 500 mA Total emitter-terminal current –2.5 A TA Operating free-air temperature range ULN200xA –20 70 °C ULN200xAI –40 105 ULQ200xA –40 85 ULQ200xAT –40 105 TJ Operating virtual junction temperature 150 °C Lead temperature for 1.6 mm (1/16 inch) from case for 10 seconds 260 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Collector-emitter voltage (non-V devices) 0 50 V TJ Junction temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) ULx200x UNIT D (SOIC) N (PDIP) NS (SO) PW (TSSOP) 16 PINS 16 PINS 16 PINS 16 PINS RθJA Junction-to-ambient thermal resistance 73 67 64 108 °C/W RθJC(top) Junction-to-case (top) thermal resistance 36 54 n/a 33.6 °C/W RθJB Junction-to-board thermal resistance n/a n/a n/a 51.9 °C/W ψJT Junction-to-top characterization parameter n/a n/a n/a 2.1 °C/W ψJB Junction-to-board characterization parameter n/a n/a n/a 51.4 °C/W |
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