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HYB39S512400AT Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # HYB39S512400AT
Description  512-Mbit Synchronous DRAM
Download  28 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

HYB39S512400AT Datasheet(HTML) 8 Page - Infineon Technologies AG

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HYB 39S512[40/80/16]0AT(L)
512-Mbit Synchronous DRAM
Overview
Data Sheet
8
Rev. 1.3, 2004-03
10082003-L1GD-PVI5
1
Overview
1.1
Features
Fully Synchronous to Positive Clock Edge
•0 to 70
°C operating temperature
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2 & 3
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8 and full page
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Data Mask for Read / Write control (
×4, ×8)
Data Mask for byte control (
×16)
Auto Refresh (CBR) and Self Refresh
Power Down and Clock Suspend Mode
8192 refresh cycles / 64 ms (7,8
µs)
Random Column Address every CLK ( 1-N Rule)
Single 3.3 V
± 0.3 V Power Supply
LVTTL Interface versions
Plastic Packages:
P-TSOPII-54 400mil width (x4, x8, x16)
1.2
Description
The HYB 39S512[40/80/16]0AT(L) are four bank Synchronous DRAM’s organized as 4 banks
× 32MBit ×4, 4
banks
× 16MBit ×8 and 4 banks × 8Mbit ×16 respectively. These synchronous devices achieve high speed data
transfer rates
for CAS-latencies by employing a chip architecture that prefetches multiple bits and then
synchronizes the output data to a system clock. The chip is fabricated with INFINEON’s advanced 0.14
µm
512MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically
and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge
of an externally supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate
than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length,
CAS latency and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a single 3.3 V
± 0.3 V
power supply. All 512Mbit components are housed in P-TSOPII-54 packages.
Table 1
Performance
Part Number Speed Code
–7
–7.5
–8Unit
Speed Grade
PC133 2–2–2
PC133 3–3–3
PC100 2–2–2
max. Clock Frequency
@CL3
f
CK
143
133
125
MHz
t
CK3
77.5
8ns
t
AC3
5.4
5.4
6
ns
@CL2
t
CK2
7.5
10
10
ns
t
AC2
5.4
6
6
ns


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