1

2

3

4

5

6

7

8

GND2

INB

V

CC2

V

CC1

OUTB

GND1

INA

OUTA

1

2

3

4

5

6

7

8

GND2

INB

V

CC2

V

CC1

OUTB

GND1

OUTA

INA

ISO7220A, ISO7220B, ISO7220C, ISO7220M

ISO7221A, ISO7221B, ISO7221C, ISO7221M

SLLS755N – JULY 2006 – REVISED SEPTEMBER 2015

www.ti.com

5

Pin Configuration and Functions

ISO7220x D Package

ISO7221x D Package

8-Pin SOIC

8-Pin SOIC

Top View

Top View

Pin Functions

PIN

I/O

DESCRIPTION

NAME

ISO7220x

ISO7221x

INA

2

7

I

Input, channel A

INB

3

3

I

Input, channel B

GND1

4

4

—

GND2

5

5

—

OUTA

7

2

O

Output, channel A

OUTB

6

6

O

Output, channel B

1

1

—

8

8

—

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

–0.5

6

V

Voltage at IN, OUT

–0.5

(3)

V

Output current

–15

15

mA

Maximum junction temperature

170

°C

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These ratings are stress

ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods can affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to network ground pin and are peak voltage values.

(3)

Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE

UNIT

±4000

V

Charged device model (CDM), per JEDEC specification JESD22-C101,

Electrostatic discharge

±1000

V

Machine Model, ANSI/ESDS5.2-1996

±200

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6

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Product Folder Links: ISO7220A ISO7220B ISO7220C ISO7220M ISO7221A ISO7221B ISO7221C ISO7221M