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HYE25L128160AC-8 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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HYE25L128160AC-8 Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 50 page  HYB/E 25L128160AC 128-MBit Mobile-RAM INFINEON Technologies 6 2003-02 LDQM UDQM, Input Pulse Active High The Data Input/Output mask places the DQ buffers in a high impedance state when sampled high. In Read mode, DQM has a latency of two clock cycles and controls the output buffers like an output enable. In Write mode, DQMx has a latency of zero and operates as a word mask by allowing input data to be written if it is low but blocks the write operation if DQM is high. LDQM and UDQM controls the lower and upper bytes in x16 SDRAM. V DD V SS Supply –– Power and ground for the input buffers and the core logic. V DDQ V SSQ Supply –– Isolated power supply and ground for the output buffers to provide improved noise immunity. Pin Type Signal Polarity Function |
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