ISO35T

SLLSE26D – NOVEMBER 2010 – REVISED OCTOBER 2015

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6.2 ESD Ratings

VALUE

UNIT

Bus pins and GND1

±6000

Human body model (HBM), per ANSI/ESDA/JEDEC JS-

Bus pins and GND2

±16000

Electrostatic

All pins

±4000

V

discharge

±1500

Machine model (MM), ANSI/ESDS5.2-1996

±200

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM

MAX

UNIT

Supply Voltage

3

3.3

3.6

V

Voltage at any bus terminal (separately or common-mode)

–7

12

V

High-level input voltage

2

D, DE, RE

V

Low-level input voltage

0

0.8

Differential input voltage

A with respect to B

–12

12

V

Differential load resistance

54

60

Ω

Driver

–60

60

Output Current

mA

Receiver

–8

8

Ambient temperature

-40

85

°C

Operating junction temperature

–40

150

°C

Signaling Rate

1

Mbps

6.4 Thermal Information

ISO35T

DW (SOIC)

UNIT

16 PINS

Junction-to-ambient thermal resistance

80.5

°C/W

Junction-to-case (top) thermal resistance

43.8

°C/W

Junction-to-board thermal resistance

49.7

°C/W

Junction-to-top characterization parameter

13.8

°C/W

Junction-to-board characterization parameter

41.4

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.5 Power Ratings

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

VALUE

UNIT

Maximum device power dissipation

373

mW

Input a 0.5-MHz 50% duty cycle square wave

to Driver and Receiver

4

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