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STS6P3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STS6P3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 15 page This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. November 2013 DocID024219 Rev 2 1/15 STS6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A, STripFET™ VI DeepGATE™ Power MOSFET in a SO-8 package Datasheet - preliminary data Figure 1. Internal schematic diagram Features • RDS(on)* Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed. SO-8 1 4 Order code VDS RDS(on) max ID STS6P3LLH6 30 V 0.03 Ω 6 A Table 1. Device summary Order code Marking Packages Packaging STS6P3LLH6 6K3L SO-8 Tape and reel www.st.com |
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