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STL23NS3LLH7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL23NS3LLH7 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STL23NS3LLH7 Electrical characteristics DocID025074 Rev 3 5/14 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage ISD = 2 A, VGS = 0 - 0.4 0.7 V trr Reverse recovery time ISD = 2 A, di/dt = 100 A/µs VGS = 0 V - 31.2 ns Qrr Reverse recovery charge - 18.7 nC IRRM Reverse recovery current - 1.2 A Notes: (1) Pulsed: pulse duration = 300 µs, duty cycle 1.5%. |
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