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DB4 Datasheet(PDF) 1 Page - Shanghai Shunye Electronics Co.,Ltd. |
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DB4 Datasheet(HTML) 1 Page - Shanghai Shunye Electronics Co.,Ltd. |
1 / 2 page FEATURES The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover symmetry is within three volts(DB3,DC34,DB4)or four volts(DB6).These diacs are intended for use in thyrisitors phase control, circuits for lamp dimming,universal motor speed control, and heat control. JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's ABSOLUTE RATINGS(LIMITING VALUES) DB3 DC34 DB4 DB6 Power Dissipation on Printed Circuit(L=10mm) Repetitive Peak in-state tp=10u s Current F=100Hz TSTG/TJ Storage and Operating Junction Temperature ELECTRCAL CHARACTERISTICS DB3 DC34 DB4 DB6 c=22nF(Note 2) Min 28 30 35 56 See diagram1 Typ 32 34 40 60 Max 36 38 45 70 |+VBO|- c=22nF(Note 2) |-VBO| See diagram1 I=( IBO to IF=10mA) See diagram1 Vo See diagram2 Min V IBO c=22nF(Note 2) Max A tr See Diagram 3 Typ S VB=0.5 VBO max see diagram 1 Notes: 1. Electrical characteristics applicable in both forward and reverse directions. 2. Connected in parallel with the devices. Parameters Symbols Units 2.0 2.0 1.6 Value Symbols Parameters -40 to +125/-40 to 110 mW A Pc ITRM TA=50 150 2.0 VBO Breakover Voltage(Note 2) Output Voltage(Note 1) Breakover Current(Note 1) Max | V| IB Leakage Current(Note 1) Rise Time(Note 1) Value Dynamic Breakover Voltage(Note 1) Breakover Voltage Symmetry Units 3 4 5 Test Conditions Max Min 10 10 V V V A 5 100 1.5 DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC www.shunyegroup.com.cn |
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