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Electromigration Fail Mode

Wirebond Fail Mode

SN65HVD11-HT

SLLS934F – NOVEMBER 2008 – REVISED NOVEMBER 2015

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(1)

See data sheet for absolute maximum and minimum recommended operating conditions.

(2)

Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

(3)

The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the

dominant failure mechanism affecting device wearout for the specific device process and design characteristics.

(4)

Wirebond fail mode applicable for D package only.

(5)

Wirebond life approaches 0 hours < 200°C which is only true of the HD device.

Figure 1. SN65HVD11SJD/SKGDA/SHKJ/SHKQ/HD

Operating Life Derating Chart

10

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