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BTS660P Datasheet(PDF) 8 Page - Infineon Technologies AG |
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BTS660P Datasheet(HTML) 8 Page - Infineon Technologies AG |
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8 / 16 page  Data Sheet BTS660P Infineon Technologies AG Page 8 2003-Oct-01 Input circuit (ESD protection) IN ZD IN I V bb Rbb V Z,IN V bIN V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 74 V (typ). Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 µs). Short circuit detection Logic unit + Vbb OUT V ON Current sense status output IS IS R IS I ZD IS V bb V bb R Z,IS V VZ,IS = 74 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS should be less than Vbb - 5 V IL(M) / Kilis . Note: For large values of RIS the voltage VIS can reach almost Vbb. See also over voltage protection. If you don't use the current sense output in your application, you can leave it open. Inductive and over voltage output clamp + Vbb OUT PROFET V Z1 V ON IS V OUT VON is clamped to VON(Cl) = 62 V typ |
Similar Part No. - BTS660P |
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Similar Description - BTS660P |
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