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DS90CR216A, DS90CR286A, DS90CR286A-Q1

www.ti.com

SNLS043H – MAY 2000 – REVISED JANUARY 2016

Product Folder Links: DS90CR216A DS90CR286A DS90CR286A-Q1

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Copyright © 2000–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

6 Specifications

6.1 Absolute Maximum Ratings

see

(1) (2)

MIN

MAX

UNIT

–0.3

4

V

LVCMOS output voltage

–0.3

V

LVDS receiver input voltage

–0.3

V

Junction temperature

150

°C

Lead temperature (soldering, 4 sec)

260

°C

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±7000

V

Charged device model (CDM), per JEDEC specification JESD22-

±700

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

3.0

3.3

3.6

V

–40

25

85

°C

Receiver input range

0

2.4

V

100

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

DS90CR286A/-Q1

DS90CR216A

UNIT

DGG (TSSOP)

DGG (TSSOP)

56 PINS

48 PINS

Junction-to-ambient thermal resistance

64.6

67.8

°C/W

Junction-to-case (top) thermal resistance

20.6

22.1

°C/W

Junction-to-board thermal resistance

33.3

34.8

°C/W

Junction-to-top characterization parameter

1.0

1.1

°C/W

Junction-to-board characterization parameter

33.0

34.5

°C/W